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@article{Awirothananon20042088,
Abstract = {A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 s was studied using magneto-photoluminescence up to 28 T. Blueshifts increasing with annealing temperature, due to Ga-As interchange at the QD-barrier interface, are correlated with a reduction in inhomogeneous broadening and a reduction in inter-sublevel spacing. These new sample properties allow us to obtain clear crossing patterns closely matched with Fock-Darwin diagrams where the field applied perpendicular to the QD plane lifts the state degeneracies. In the limit that in-plane electron and hole wavefunction extension is the same, the splitting of the p-shell with magnetic field is inversely proportional to the in-plane exciton reduced mass. We use this to obtain the evolution of the latter with intermixing, and compare with predictions of single-particle k * p calculations.},
Author = {Awirothananon, S. and Sheng, W.D. and Babinski, A. and Studenikin, S. and Raymond, S. and Sachrajda, A. and Potemski, M. and Fafard, S. and Ortner, G. and Bayer, M.},
Document_Type = {Conference Paper},
Journal = {Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers},
Number = {4 B},
Pages = {2088-2092},
Source = {Scopus},
Title = {Electronic and structural properties of interdiffused self-assembled quantum dots from magneto-photoluminescence},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-17144440020&partnerID=40&md5=e133d55f2a496e52247d2135a36216e0},
Volume = {43},
Year = {2004},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-17144440020&partnerID=40&md5=e133d55f2a496e52247d2135a36216e0}}