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@article{Ciorga20022177,
Abstract = {The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. {\copyright} 2002 American Institute of Physics.},
Author = {Ciorga, M. and Pioro-Ladriere, M. and Zawadzki, P. and Hawrylak, P. and Sachrajda, A.S.},
Document_Type = {Article},
Journal = {Applied Physics Letters},
Number = {12},
Pages = {2177-2179},
Source = {Scopus},
Title = {Tunable negative differential resistance controlled by spin blockade in single-electron transistors},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-79956048397&partnerID=40&md5=7f541d1ab14c10699e9ede093bb3ffc0},
Volume = {80},
Year = {2002},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-79956048397&partnerID=40&md5=7f541d1ab14c10699e9ede093bb3ffc0}}