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Équipe de Recherche en Physique de l'Information Quantique



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@Article{Ciorga:2002p759,
author = {M Ciorga and M Pioro-Ladriere and P Zawadzki and P Hawrylak and AS Sachrajda},
journal = {Appl Phys Lett},
title = {Tunable negative differential resistance controlled by spin blockade in single-electron transistors},
abstract = {The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. (C) 2002 American Institute of Physics.},
affiliation = {Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada},
number = {12},
pages = {2177--2179},
volume = {80},
year = {2002},
month = {Jan},
language = {English},
keywords = {Nonlinear Transport, Spectroscopy, Coulomb, Spectrum, Quantum Dots, Injection},
date-added = {2010-05-14 10:38:26 -0400},
date-modified = {2010-05-14 10:38:26 -0400},
doi = {10.1063/1.1459489},
pmid = {000174498700045},
uri = {papers://2218479D-7AA1-43D5-8E9E-4EF38C7D1379/Paper/p759},
rating = {0}
}