Équipe de Recherche en Physique de l'Information Quantique


Abstract = {A brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained Si.88Ge.12 quantum wells is described and the results of characterization using low temperature magnetotransport presented. Comments are also made about the appearance, in some samples, of an insulating phase at low temperatures.},
Author = {Coleridge, P.T. and Feng, Y. and Lafontaine, H. and Sachrajda, A.S. and Williams, R. and Zawadzki, P.},
Document_Type = {Conference Paper},
Journal = {Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD},
Pages = {414-421},
Source = {Scopus},
Title = {Magnetotransport properties of p-type strained SiGe quantum wells},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0030360119&partnerID=40&md5=f0a07320e037e9ec1c4918df5636a42d},
Year = {1996},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0030360119&partnerID=40&md5=f0a07320e037e9ec1c4918df5636a42d}}