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@article{Coleridge2000268,
Abstract = {The strained p-type SiGe system exhibits, in addition to the normal integer quantum Hall effect (IQHE) transitions, an insulating phase near filling factor ν = 3/2 and a B = 0 metal-insulator transition of the kind observed in high-mobility Si-MOSFETs. Samples were grown by a ultra-high vacuum chemical vapor deposition process. The quantum well is sufficiently narrow that the lattice constant difference between the alloy and the pure Si is all taken up by strain which means the heavy hole band is well separated by the other bands. Magnetoresistance measurements are presented for strained p-SiGe quantum well where the density is varied through the B = 0 metal-insulator transition.},
Author = {Coleridge, P.T. and Zawadzki, P. and Sachrajda, A.S. and Williams, R.L. and Feng, Y.},
Document_Type = {Article},
Journal = {Physica E: Low-Dimensional Systems and Nanostructures},
Number = {1},
Pages = {268-271},
Source = {Scopus},
Title = {Universal behaviour of metal-insulator transitions in the p-SiGe system},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0034138855&partnerID=40&md5=f603015c499e649625db2d333b76bc09},
Volume = {6},
Year = {2000},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0034138855&partnerID=40&md5=f603015c499e649625db2d333b76bc09}}