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@article{Granger2011,
Abstract = {We study the electron transport properties of gated quantum dots formed in InGaAs/InP quantum well structures grown by chemical-beam epitaxy on prepatterned substrates. Quantum dots form directly underneath narrow gates due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade in the quantum Hall regime are also observed. {\copyright} 2011 American Institute of Physics.},
Art_Number = {132107},
Author = {Granger, G. and Studenikin, S.A. and Kam, A. and Sachrajda, A.S. and Poole, P.J.},
Document_Type = {Article},
Journal = {Applied Physics Letters},
Number = {13},
Source = {Scopus},
Title = {Few-electron quantum dots in InGaAs quantum wells: Role of fluctuations},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-79953745487&partnerID=40&md5=7537c78858db0081dad16cfc63a592ec},
Volume = {98},
Year = {2011},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-79953745487&partnerID=40&md5=7537c78858db0081dad16cfc63a592ec}}