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@article{Long2006553,
Abstract = {We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of 10 - 20 A using a quantum corral fabricated on similar material. {\copyright} 2006 Elsevier B.V. All rights reserved.},
Author = {Long, A.R. and Pioro-Ladri{\`e}re, M. and Davies, J.H. and Sachrajda, A.S. and Gaudreau, L. and Zawadzki, P. and Lapointe, J. and Gupta, J. and Wasilewski, Z. and Studenikin, S.A.},
Document_Type = {Article},
Journal = {Physica E: Low-Dimensional Systems and Nanostructures},
Number = {1-2},
Pages = {553-556},
Source = {Scopus},
Title = {The origin of switching noise in GaAs/AlGaAs lateral gated devices},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-33746656259&partnerID=40&md5=93aa62abadbbd61616ef41f18fb61782},
Volume = {34},
Year = {2006},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-33746656259&partnerID=40&md5=93aa62abadbbd61616ef41f18fb61782}}