Équipe de Recherche en Physique de l'Information Quantique


Abstract = {We examine the ohmic contact-semiconductor interface and the process of current injection in a high mobility GaAs/AlGaAs Corbino device. Magneto-transport measurements demonstrate that weak localization processes occur within the region of the 2DEG penetrated by the spike array formed on annealing of the ohmic contacts. These studies indicate that patterned ohmic contacts can provide a useful alternative to gated or etched sub-micron structures for fundamental mesoscopic physics investigations.},
Author = {Newbury, R. and Taylor, R.P. and Sachrajda, A.S. and Coleridge, P.T. and Feng, Y. and Davies, M. and McCaffrey, J.P.},
Document_Type = {Conference Paper},
Journal = {Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD},
Pages = {192-195},
Source = {Scopus},
Title = {Ohmic contact spike arrays for nanostructure device fabrication: Spike distribution and geometrical scattering of the electron-wave current},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0030367338&partnerID=40&md5=704b1d365a7b87d5c4e484c2656b7beb},
Year = {1996},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0030367338&partnerID=40&md5=704b1d365a7b87d5c4e484c2656b7beb}}