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@article{Newbury19973991,
Abstract = {We have investigated the geometry-induced magnetoresistance (MR) observed in a high mobility AlGaAs/GaAs electron billiard device. Our billiard is shaped by a surface gate arrangement incorporating a 'bridging interconnect' fabrication technique which allows independent control of the cavity's central circular antidot and evolution from a regular square to a nominally chaotic environment in a single device. The low field MR signature of the device displays a marked fractal form with MR structure on a magnetic field scale much finer than that previously reported for generically similar electron-wave billiards.},
Author = {Newbury, R. and Taylor, R.P. and Sachrajda, A.S. and Feng, Y. and Coleridge, P.T. and Dettmann, C. and Fromhold, T.M.},
Document_Type = {Article},
Journal = {Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers},
Number = {6 SUPPL. B},
Pages = {3991-3995},
Source = {Scopus},
Title = {Fractal behavior in the magnetoresistance of chaotic billiards},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-3643120985&partnerID=40&md5=17f03a9f723e3e559ce042fdbcd857e5},
Volume = {36},
Year = {1997},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-3643120985&partnerID=40&md5=17f03a9f723e3e559ce042fdbcd857e5}}