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@article{Studenikin2003311,
Abstract = {There is currently a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend nonmonotonically on gate voltage. The spin-orbit scattering rate had a maximum value of 5 × 10 10 s(-1) at an electron density of n = 3 × 10 15 m(-2). The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately 10 9 s(-1) at an electron concentration of n = 6 × 10 15 m(-2). This behavior could not be explained by either the Rashba or the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces. {\copyright} 2003 MAIK "Nauka/ Interperiodica".},
Author = {Studenikin, S.A. and Coleridge, P.T. and Poole, P. and Sachrajda, A.},
Document_Type = {Article},
Journal = {JETP Letters},
Number = {6},
Pages = {311-316},
Source = {Scopus},
Title = {Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-1842649151&partnerID=40&md5=e6e9608f0abf63e3cef5dc4ad3126707},
Volume = {77},
Year = {2003},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-1842649151&partnerID=40&md5=e6e9608f0abf63e3cef5dc4ad3126707}}