Équipe de Recherche en Physique de l'Information Quantique


Abstract = {We examine the electronic transport properties of a sheet of silicon donors introduced during the molecular beam epitaxial growth of InAs/GaAs, using the suspended growth doping technique. Layers are characterised by magnetotransport measurements in magnetic fields applied parallel and perpendicular to the sample surface. {\copyright} 1991.},
Author = {Williams, R.L. and Coleridge, P. and Wasilewski, Z.R. and Dion, M. and Sachrajda, A. and Rolfe, S.},
Document_Type = {Article},
Journal = {Solid State Communications},
Number = {6},
Pages = {493-497},
Source = {Scopus},
Title = {Silicon atomic plane doping in MBE grown InAs/GaAs},
Url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0026157061&partnerID=40&md5=830d3cd446bfa9a7bca510db575a620c},
Volume = {78},
Year = {1991},
Bdsk-Url-1 = {http://www.scopus.com/inward/record.url?eid=2-s2.0-0026157061&partnerID=40&md5=830d3cd446bfa9a7bca510db575a620c}}